| 摘要 |
The present invention addresses the problem of providing: an organic thin film transistor which is capable of achieving high mobility; and a method for manufacturing this organic thin film transistor. The problem is able to be solved by: comprising a base, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source and drain electrodes; additionally comprising charge injection layers which are provided, on the facing sides of the source electrode and the drain electrode, between the source electrode and a layer on the base side of the source electrode and between the drain electrode and a layer on the base side of the drain electrode, and which have thicknesses decreasing in the directions opposite to the facing directions of the source electrode and the drain electrode; and forming the source and drain electrodes by laser scanning a metal layer and dropping a solution that forms the charge injection layers on the laser scanned portions. |
