| 摘要 |
A modulator circuit (100) for electro-optical communication is disclosed, and it comprises a semiconductor substrate (105); a first semiconductor portion (102) doped using a first dopant, and a second semiconductor portion (104) doped using a second dopant which is different to the first dopant, wherein at least the second semiconductor portion is formed on the semiconductor substrate, and at least one portion of the first semiconductor portion is stacked directly to the second semiconductor portion to form a circuit junction; and wherein the first and second semiconductor portions are respectively doped with cooperating doping concentrations of about between 5e16/cm3 to 1e19/cm3 to enable a depletion region to be formed within the circuit junction when in use, to electrically insulate the first and second semiconductor portions from each other. A method of forming the modulator circuit is also disclosed. |
