ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIN FIELD EFFECT TRANSISTOR INTEGRATION FOR INCREASED MOBILITY AND SHARPER JUNCTION

摘要

A semiconductor device that includes at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. The semiconductor device also includes at least one germanium free fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. A gate structure is present on a channel region of each of the germanium containing fin structure and the germanium free fin structure. N-type epitaxial semiconductor material having a square geometry present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium free fin structures. P-type epitaxial semiconductor material having a square geometry is present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium containing fin structures.

主权项

1. A method of forming a semiconductor device comprising:
forming a plurality of fin structures from a silicon containing semiconductor substrate having a (110) plane orientation, wherein said fin structures have a length in a <110> direction and a sidewall along the (100) plane; converting at least one of the fin structures to a germanium containing type fin structure, wherein at least one remaining of the fin structures is germanium free; forming n-type epitaxial semiconductor material having a rectangular geometry on the source and drain portions of the sidewalls having the (100) plane of the fin structures that are germanium free, and forming p-type epitaxial semiconductor material having a rectangular geometry on the source and drain portions of the sidewalls having the (100) plane of the germanium containing type fin structures.