发明名称 Body-Mountable Device with a Common Substrate for Electronics and Battery
摘要 An example device includes a silicon substrate having a first substrate surface and a second substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit (IC), where the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, where the lithium-based battery includes an anode current collector and a cathode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the IC; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the IC.
申请公布号 US2017092566(A1) 申请公布日期 2017.03.30
申请号 US201514863510 申请日期 2015.09.24
申请人 Verily Life Sciences LLC 发明人 Biederman William James;Yeager Daniel James;Otis Brian
分类号 H01L23/48;H01L25/16 主分类号 H01L23/48
代理机构 代理人
主权项 1. A device comprising: a silicon substrate having a first substrate surface and a second substrate surface opposite the first substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit, wherein the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, wherein the lithium-based battery includes an anode current collector and a cathode current collector defined within the plurality of battery layers and contacting the first substrate surface, and wherein the plurality of battery layers includes an electrolyte layer in contact with the first substrate surface, the cathode current collector, and the anode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the integrated circuit, wherein the first TSV comprises a first conductive channel insulated from the silicon substrate by a first insulating layer surrounding the first conductive channel; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the integrated circuit, wherein the second TSV comprises a second conductive channel insulated from the silicon substrate by a second insulating layer surrounding the second conductive channel.
地址 Mountain View CA US