SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS

摘要

Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.

主权项

1. A spin-transfer torque memory (STTM) device comprising:
a magnetic tunnel junction (MTJ) comprising:
a fixed magnetic layer;a free magnetic layer; anda tunneling barrier layer disposed between the fixed and free magnetic layers; contacts on either side of the MTJ, wherein at least one contact is magnetic; and an additional magnetic layer antiferromagnetically coupled to the at least one magnetic contact.