BIDIRECTIONAL ZENER DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A bidirectional Zener diode includes a substrate. A first conductivity type base region is formed in a surficial portion of the substrate. A second conductivity type first impurity region is formed in a surficial portion of the base region so as to form a pn junction with the base region. A second conductivity type second impurity region is formed in a surficial portion of the base region in a manner spaced apart from the first impurity region so as to form a pn junction with the base region. A first electrode is arranged at the surface of the substrate. A second electrode is arranged at the surface of the substrate. A dimension of the base region along the surface of the substrate between the first impurity region and the second impurity region is equal to or greater than 4.0 μm and equal to or smaller than 12.5 μm.

主权项

1. A bidirectional Zener diode comprising:
a substrate; a first conductivity type base region formed in a surficial portion of the substrate; a second conductivity type first impurity region formed in a surficial portion of the base region so as to form a pn junction between the first impurity region and the base region; a second conductivity type second impurity region formed in a surficial portion of the base region in a manner spaced apart from the first impurity region so as to form a pn junction between the second impurity region and the base region; a first electrode arranged at a surface of the substrate so as to be connected electrically to the first impurity region; and a second electrode arranged at the surface of the substrate so as to be connected electrically to the second impurity region, wherein a dimension of the base region along the surface of the substrate between the first impurity region and the second impurity region is equal to or greater than 4.0 μm and equal to or smaller than 12.5 μm.