| 发明名称 |
SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF |
| 摘要 |
A semiconductor structure and a method of fabricating the semiconductor structure are disclosed herein. The semiconductor structure includes a substrate, a strain-inducing layer and an epitaxy structure. The strain-inducing layer is disposed on the substrate, and the epitaxy structure is embedded in the strain-inducing layer and not in contact with the substrate. |
| 申请公布号 |
US2017092768(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201514871454 |
申请日期 |
2015.09.30 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SUNG Hsueh-Chang;CHANG Chih-Chiang;LI Kun-Mu |
| 分类号 |
H01L29/78;H01L29/66;H01L21/02;H01L29/165 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a substrate; a strain-inducing layer disposed on the substrate; a gate dielectric layer disposed on the strain-inducing layer, wherein the gate dielectric layer and the strain-inducing layer are in contact; a gate electrode disposed on the gate dielectric layer; and an epitaxy structure embedded in the strain-inducing layer and not in contact with the substrate. |
| 地址 |
HSINCHU TW |
