SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns. Moreover, the semiconductor device includes a permeable layer on the conductive patterns. Methods of fabricating semiconductor devices are also provided.

主权项

1. A semiconductor device, comprising:
a substrate including first and second regions; a plurality of first conductive patterns on the first region and a plurality of second conductive patterns on the second region; an insulating diffusion barrier layer on sidewalls of the plurality of first conductive patterns and the plurality of second conductive patterns; a first gap between adjacent ones of the plurality of first conductive patterns; a permeable layer on the insulating diffusion barrier layer, the insulating diffusion barrier layer extending between the first gap and the permeable layer, and the permeable layer being spaced apart from the first gap; and a second gap between adjacent ones of the plurality of second conductive patterns, wherein the first gap is defined by portions of the insulating diffusion barrier layer that are on the sidewalls of the adjacent ones of the plurality of first conductive patterns, and a width of a bottom portion of the first gap is greater than a width of a top portion of the first gap, and wherein the second gap is defined by portions of the insulating diffusion barrier layer that are on the sidewalls of the adjacent ones of the plurality of second conductive patterns and the permeable layer, and a width of a bottom portion of the second gap is greater than a width of a top portion of the second gap.