| 发明名称 |
SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD |
| 摘要 |
A method for manufacturing a semiconductor device may include the following steps: preparing a semiconductor structure that comprises a substrate and a first fin member, wherein the first fin member is connected to the substrate and comprises a first semiconductor portion; providing a first-type dopant member that directly contacts the first semiconductor portion, comprises first-type dopants, and is at least one of liquid and amorphous; and performing heat treatment on at least one of the first-type dopant member and the first semiconductor portion to enable a first portion of the first-type dopants to diffuse through a first side of the first-type dopant member into the first semiconductor portion. |
| 申请公布号 |
US2017092498(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615066442 |
申请日期 |
2016.03.10 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation ;Semiconductor Manufacturing International (Beijing) Corporation |
发明人 |
LI Yong |
| 分类号 |
H01L21/228;H01L21/02;H01L21/22;H01L29/66;H01L29/06 |
主分类号 |
H01L21/228 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, the method comprising:
preparing a semiconductor structure, which comprises a substrate and a first fin member, wherein the first fin member is connected to the substrate and comprises a first semiconductor portion; providing a first-type dopant member, which directly contacts the first semiconductor portion, comprises first-type dopants, and is at least one of liquid and amorphous; and performing heat treatment on at least one of the first-type dopant member and the first semiconductor portion to enable a first portion of the first-type dopants to diffuse through a first side of the first-type dopant member into the first semiconductor portion. |
| 地址 |
Shanghai CN |
