| 摘要 |
Provided is a sputtering target which is capable of forming a conductive film on a resin substrate without causing an arc discharge, said conductive film being not easily separated. A sputtering target 55 for forming an alloy thin film on a substrate 32 in process, said substrate 32 in process having a base formed of a resin, is configured to contain 0.01 atom% or more of an additive that is formed of Zn and/or Mn per 100 atom% of a base material that contains more than 50 atom% of Cu, from 5 atom% to 40 atom% (inclusive) of Ni and from 3 atom% to 10 atom% (inclusive) of Al. Consequently, a sputtering target having no pore is able to be obtained, and thus no arc discharge is caused. |
