发明名称 |
VOLATILE MEMORY AND ONE-TIME PROGRAM (OTP) COMPATIBLE MEMORY CELL AND PROGRAMMING METHOD |
摘要 |
A volatile and one-time program (OTP) compatible asymmetric memory cell may include a first pull-up transistor having a first threshold voltage. The asymmetric memory cell may also include a second pull-up transistor having a second threshold voltage that differs from the first threshold voltage. The asymmetric memory cell may further include a switch coupled to a well of the first pull-up transistor and the second pull-up transistor to alternate between a program voltage (Vpg) and a power supply voltage. The asymmetric memory cell may also include a peripheral switching circuit to control programming of the asymmetric memory cell. |
申请公布号 |
WO2017052759(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
WO2016US44320 |
申请日期 |
2016.07.27 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LI, Xia;CHEN, Xiaonan;MOJUMDER, Niladri Narayan;WANG, Zhongze;LI, Weidan |
分类号 |
G11C11/412;G11C7/02;G11C11/419;G11C17/14;G11C17/18 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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