发明名称 VOLATILE MEMORY AND ONE-TIME PROGRAM (OTP) COMPATIBLE MEMORY CELL AND PROGRAMMING METHOD
摘要 A volatile and one-time program (OTP) compatible asymmetric memory cell may include a first pull-up transistor having a first threshold voltage. The asymmetric memory cell may also include a second pull-up transistor having a second threshold voltage that differs from the first threshold voltage. The asymmetric memory cell may further include a switch coupled to a well of the first pull-up transistor and the second pull-up transistor to alternate between a program voltage (Vpg) and a power supply voltage. The asymmetric memory cell may also include a peripheral switching circuit to control programming of the asymmetric memory cell.
申请公布号 WO2017052759(A1) 申请公布日期 2017.03.30
申请号 WO2016US44320 申请日期 2016.07.27
申请人 QUALCOMM INCORPORATED 发明人 LI, Xia;CHEN, Xiaonan;MOJUMDER, Niladri Narayan;WANG, Zhongze;LI, Weidan
分类号 G11C11/412;G11C7/02;G11C11/419;G11C17/14;G11C17/18 主分类号 G11C11/412
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