发明名称 |
ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIN FIELD EFFECT TRANSISTOR INTEGRATION FOR INCREASED MOBILITY AND SHARPER JUNCTION |
摘要 |
A semiconductor device that includes at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. The semiconductor device also includes at least one germanium free fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. A gate structure is present on a channel region of each of the germanium containing fin structure and the germanium free fin structure. N-type epitaxial semiconductor material having a square geometry present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium free fin structures. P-type epitaxial semiconductor material having a square geometry is present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium containing fin structures. |
申请公布号 |
US2017092646(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615285000 |
申请日期 |
2016.10.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN CHIA-YU;DORIS BRUCE B.;HE HONG;VENIGALLA RAJASEKHAR |
分类号 |
H01L27/092;H01L29/78;H01L29/417;H01L29/04 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane; at least one germanium free fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane; a gate structure on a channel region of each of the germanium containing fin structure and the germanium free fin structure; N-type epitaxial semiconductor material having a square geometry present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium free fin structures; and P-type epitaxial semiconductor material having a square geometry is present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium containing fin structures. |
地址 |
Armonk NY US |