发明名称 |
Memory Device Interconnects and Method of Manufacture |
摘要 |
A method of fabricating an integrated circuit memory device including forming a first and second inter-level dielectric layer, an anti-reflective coating layer, and a plurality of electrical connections is disclosed. |
申请公布号 |
US2017092577(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615239580 |
申请日期 |
2016.08.17 |
申请人 |
Cypress Semiconductor Corporation |
发明人 |
Fang Shenqing;Wang Connie Pin-Chin;Yu Wen;WANG Fei |
分类号 |
H01L23/528;H01L27/11524;H01L21/768 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
San Jose CA US |