| 发明名称 |
PLASMA DICING WITH BLADE SAW PATTERNED UNDERSIDE MASK |
| 摘要 |
Consistent with an example embodiment, there is a method for preparing an integrated circuit (IC) device from a wafer substrate, the wafer substrate having a top-side surface with a plurality of active device die separated by saw lanes and an opposite under-side surface. The method comprises coating the under-side surface of the wafer substrate with a resilient coating, locating the position of the saw lanes from the underside surface, blade dicing trenches in the resilient material to expose under-side bulk material in the position of saw lanes, and plasma etching through the trenches to remove the exposed under-side bulk material. |
| 申请公布号 |
US2017092540(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201514871482 |
申请日期 |
2015.09.30 |
| 申请人 |
NXP B.V. |
发明人 |
Rohleder Thomas;Buenning Hartmut;Albermann Guido;Moeller Sascha;Lapke Martin |
| 分类号 |
H01L21/82;H01L21/304;H01L23/528;H01L21/66;H01L27/04;H01L21/3065;H01L21/311 |
主分类号 |
H01L21/82 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for preparing an integrated circuit (IC) device from a wafer substrate, the wafer substrate having a top-side surface with a plurality of active device die separated by saw lanes and an opposite under-side surface, the method comprising:
coating the under-side surface of the wafer substrate with a resilient material; locating the position of the saw lanes from the underside surface; blade dicing trenches in the resilient material to expose under-side bulk material in the position of the saw lanes; and plasma etching through the trenches to remove the exposed under-side bulk material, the plasma etching thereby producing an etch profile characteristic of a plasma etch process. |
| 地址 |
Eindhoven NL |
