发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A nonvolatile semiconductor storage device a memory cell array including a plurality of memory cell units arranged in a matrix configuration, the memory cell units including a memory string including a series connection of a plurality of memory cells that stores data in accordance with a threshold voltage and is capable of electrical data writing and erasure, a first select gate transistor that connects a first end of the memory string to a bit line and a second select gate transistor that connects a second end of the memory string to a source line. The nonvolatile semiconductor storage device a discharge transistor that is connected between the bit line and the source line and causes discharge of the bit line to the source line. |
申请公布号 |
US2017092362(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615010775 |
申请日期 |
2016.01.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKEKIDA Hideto |
分类号 |
G11C16/04;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile semiconductor storage device, comprising:
a memory cell array including a plurality of memory cell units arranged in a matrix configuration, the memory cell units including a memory string including a series connection of a plurality of memory cells that stores data in accordance with a threshold voltage and is capable of electrical data writing and erasure, a first select gate transistor that connects a first end of the memory string to a bit line and a second select gate transistor that connects a second end of the memory string to a source line; and a discharge transistor that is connected between the bit line and the source line and causes discharge of the bit line to the source line. |
地址 |
Minato-ku JP |