| 发明名称 |
MEMORY OPERATION THRESHOLD ADJUSTMENT BASED ON BIT LINE INTEGRITY DATA |
| 摘要 |
A data storage device includes a controller and a memory. The memory is coupled to the controller. The memory includes storage elements coupled to bit lines. The controller is configured to access bit line integrity data corresponding to a region of the memory, the bit line integrity data indicating a number of bit lines. The controller is also configured to store data related to a memory operation threshold based on the number of bit lines. |
| 申请公布号 |
US2017090788(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201514871262 |
申请日期 |
2015.09.30 |
| 申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
SHLICK MARK;BEN-RUBI REFAEL;SHIR URI;TURGEMAN AHIAD;PELTZ URI |
| 分类号 |
G06F3/06;G11C29/04 |
主分类号 |
G06F3/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A data storage device comprising:
a controller; and a memory coupled to the controller, wherein the memory includes storage elements coupled to bit lines, wherein the controller is configured to:
access bit line integrity data corresponding to a region of the memory, the bit line integrity data indicating a number of bit lines; andstore data related to a memory operation threshold based on the number of bit lines. |
| 地址 |
PLANO TX US |
