| 摘要 |
A two-transistor (2T), one magnetic tunnel junction (1MTJ), spin torque transfer (STT), spin Hall effect (SHE), magnetic random access memory (MRAM) may be configured to provide separate write current and read current paths. In such a configuration, the write current may pass through a SHE electrode disposed proximate the MTJ device. The direction of write current flow through the SHE electrode determines spin polarization of the write current, the magnetic field orientation of a free magnetic layer in the MTJ device, and consequently the resistance of the MTJ device. The write current can be at a level sufficient to cause the reliable storage of binary information in the MTJ device. The read current, at a lower level than the write current, passes through the MTJ. |
