THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, AND ARRAY SUBSTRATE

摘要

Provided are a thin film transistor and a preparation method therefor, and an array substrate, belonging to the technical field of thin film transistors and capable of solving the problem of poor performance of existing thin film transistors. The method for preparing the thin film transistor comprises: S1, forming a gate electrode (11) constituted by graphene; S2, forming a gate insulating layer (12) constituted by graphene oxide; S3, forming an active region (13) constituted by doped graphene oxide or doped graphene; and S4, forming a source electrode (14) and a drain electrode (15) constituted by graphene. The graphene constituting the source electrode (14), the drain electrode (15) and the gate electrode (11) is formed by reducing graphene oxide, and the doped graphene oxide or the doped graphene constituting the active region (13) is formed by treating graphene oxide.