Semiconductor Device with Non-Isolated Power Transistor with Integrated Diode Protection

摘要

A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.

主权项

1. A device comprising:
a semiconductor substrate having a first conductivity type; a device separating region in the semiconductor substrate and having a second conductivity type, the device separating region defining an active area and extending in a vertical orientation in the substrate along a periphery of the active area but not extending across the active area in a lateral orientation in the substrate to isolate the active area; a body region in the active area and having the first conductivity type; and a drain region in the active area and having the second conductivity type, the drain region spaced from the body region to define a conduction path of the device; wherein a spacing between the device separating region and the body region establishes a first breakdown voltage lower than a second breakdown voltage in the conduction path.