SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

In a method for manufacturing a semiconductor device, a dielectric layer is formed over a substrate. A first pattern and a second pattern are formed in the first interlayer dielectric layer. The first pattern has a width greater than a width of the second pattern. A first metal layer is formed in the first pattern and the second pattern. A second metal layer is formed in the first pattern. A planarization operation is performed on the first and second metal layers so that a first metal wiring by the first pattern and a second metal wiring by the second pattern are formed. A metal material of the first metal layer is different from a metal material of the second metal layer. The first metal wiring includes the first and second metal layers and the second metal wiring includes the first metal layer but does not include the second metal layer.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a dielectric layer over a substrate; forming an opening in the dielectric layer, the opening having a first region, a second region and a third region, a width of the first region being greater than a width of the second region, the third region being disposed over and connecting the first and second regions; forming a first metal layer in the first to third regions; forming a second metal layer in the first and third regions; and performing a planarization operation on the first and second metal layers so that a first metal wiring by the first region, a second metal wiring by the second region and a third metal wiring by the third region connecting the first and second metal wirings are formed, wherein: a metal material of the first metal layer is different from a metal material of the second metal layer, and the first and third metal wirings include the first and second metal layers and the second metal wiring includes the first metal layer but does not include the second metal layer.