METHODS FOR CONTACT FORMATION FOR 10 NANOMETERS AND BEYOND WITH MINIMAL MASK COUNTS

摘要

A method of making a semiconductor device includes depositing a hard mask on a dielectric layer on a substrate, the dielectric layer being disposed around first, second, and third gates; removing a portion of the hard mask to form an opening that exposes the first, second, and third gates; forming a patterned soft mask on the first, second, and third gates within the opening, a first portion of the patterned soft mask being disposed on the first and second gates, and a second portion of the patterned soft mask being disposed on the second and third gates; removing portions of the dielectric layer to transfer the pattern of the patterned soft mask into the dielectric layer and form first and second contact openings between the first and second gates, and third and fourth contact openings between the second and third gates; and disposing a conductive material in the contact openings.

主权项

1. A method of making features of a semiconductor device, the method comprising:
forming a patterned soft mask on a first gate, a second gate, and a third gate within an opening of a hard mask, a first portion of the patterned soft mask being disposed on the first gate and the second gate, and a second portion of the patterned soft mask being disposed on the second gate and the third gate; removing portions of a dielectric layer disposed on and around the first gate, the second gate, and the third gate to transfer the pattern of the patterned soft mask into the dielectric layer and form a first contact opening and a second contact opening between the first gate and the second gate, and a third contact opening and a fourth contact opening between the second gate and the third gate; and disposing a conductive material in the first, second, third, and fourth contact openings.