ACTIVATED THIN SILICON LAYERS

摘要

A method for forming a layer of material on a silicon layer comprises depositing a layer of silicon material having a hydrophobic H-terminated surface on a substrate, forming a hydrophilic seed layer on the surface of the silicon material, and depositing an oxide material layer on the hydrophilic seed layer.

主权项

1. A method for forming a layer of material on a silicon layer, the method comprising:
depositing a layer of silicon material having a hydrophobic H-terminated surface on a substrate, the layer of silicon material being selected from the group consisting of amorphous silica, hydrogenated amorphous silica, polysilicon, nanocrystalline silicon, and hydrogenated nanocrystalline silicon, and wherein the layer of silicon material is a separate layer independent from the substrate; forming a hydrophilic seed layer on the surface of the silicon material, wherein the hydrophilic seed layer is formed by exposing the silicon material to an oxidizing agent for 2 seconds to 60 seconds at about 2 Torr at 300 degrees Celsius; and depositing an oxide material layer on the hydrophilic seed layer.