发明名称 |
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY |
摘要 |
A method of performing an operation on a non-volatile memory (NVM) cell of a memory device is disclosed. The pass transistor of the NVM cell is an asymmetric transistor including a source with a halo implant. The source of the pass transistor is coupled to a common source line (CSL) that is shared among NVM cells of a sector of NVM cells. The operation may be performed by applying a first signal to a word line (WLS) coupled to a gate of a memory transistor of the NVM cell and applying a second signal to a bit line (BL) coupled to a drain of the memory transistor of the NVM cell. |
申请公布号 |
WO2017052862(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
WO2016US47840 |
申请日期 |
2016.08.19 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
LEE, Sungkwon;PRABHAKAR, Venkatraman |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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