| 摘要 |
An embodiment includes an apparatus comprising: a first via layer between a substrate and a first metal layer; a second via layer between the first metal layer and second metal layer; a third via layer between the second metal layer and a third metal layer; and first and second access transistors each included in the substrate; wherein (a) the second via layer and the second metal layer each include portions of a first magnetic tunnel junction (MTJ) and portions of a second MTJ, (b) the third via layer includes a metal interconnect directly contacting the first and second MTJs, and (c) the third metal layer includes a bit line that couples to the first and second access transistors through the metal interconnect and the first and second MTJs. Other embodiments are described herein. |
