| 发明名称 |
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A magnetic memory device includes a magnetic tunnel junction pattern including a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer. The first free layer includes a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface, and a second free magnetic pattern in contact with the second surface. The second free magnetic pattern includes iron-nickel (FeNi), and a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %. |
| 申请公布号 |
US2017092848(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615210627 |
申请日期 |
2016.07.14 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Jang Youngman;Lee Joonmyoung;Kim Keewon;Park Yong Sung |
| 分类号 |
H01L43/08;H01L43/10;H01L43/02 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device comprising:
a magnetic tunnel junction pattern comprising a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer, wherein the first free layer comprises: a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface; and a second free magnetic pattern in contact with the second surface of the first free magnetic pattern, wherein the second free magnetic pattern comprises iron-nickel (FeNi), and wherein a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %. |
| 地址 |
Suwon-si KR |
