SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR HAVING EPITAXIALLY GROWN INTRINSIC BASE AND DEPOSITED EXTRINSIC BASE

摘要

After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and a dopant of a first conductivity type to define an emitter and a collector on opposite sides of the trench in the top semiconductor portion, an intrinsic base comprising a second semiconductor material having a bandgap less than a bandgap of the first semiconductor material and a dopant of a second conductivity type opposite the first conductivity type is formed in a lower portion the trench by selective epitaxial growth. The intrinsic base protrudes above the top semiconductor portion and is laterally surrounded by entire top semiconductor portion and a portion of the insulator layer. An extrinsic base is then formed on top of the intrinsic base to fill a remaining volume of the trench by a deposition process.

主权项

1. A method of forming a semiconductor structure comprising:
forming a trench extending through a stack of, from bottom to top, a semiconductor portion and an insulator layer located on a substrate, the semiconductor portion comprising a first semiconductor material of a first conductivity type; forming an intrinsic base comprising a second semiconductor material of a second conductivity type within the trench, wherein the intrinsic base fills a portion of the trench and has a top surface located above a top surface of the semiconductor portion, wherein the second conductive type is opposite to the first conductivity type; and forming an extrinsic base comprising a third semiconductor material of the second conductivity type over the intrinsic base, wherein the extrinsic base has a top surface coplanar with a top surface of the insulator layer and sidewalls vertically coincident with sidewalls of the intrinsic base.