HEMT HAVING HEAVILY DOPED N-TYPE REGIONS AND PROCESS OF FORMING THE SAME

摘要

A HEMT made of nitride semiconductor materials and a process of forming the same are disclosed, where the HEMT has n-type regions beneath the source and drain electrodes with remarkably increased carrier concentration. The HEMT provides the n-type regions made of at least one of epitaxially grown ZnO layer and MgZnO layer each doped with at least aluminum and gallium with density higher than 1×1020 cm−3. The process of forming the HEMT includes steps of forming recesses by dry-etching, epitaxially growing n-type layer, removing surplus n-type layer except within the recesses by dry-etching using hydrocarbon, and forming the electrodes on the n-type layer.

主权项

1. A high electron mobility transistor (HEMT) made of nitride semiconductor materials, comprising:
a channel layer made of nitride semiconductor material; a barrier layer made of nitride semiconductor material having bandgap energy greater than that of the channel layer; n-type regions made of at least one of zinc oxide (ZnO) and magnesium zinc oxide (MgZnO), the n-type regions being doped with at least aluminum (Al) and gallium (Ga); and source and drain electrodes provided on the n-type regions, respectively, and a gate electrode provided on the barrier layer.