发明名称 |
Forming Odd Number of Fins by Sidewall Imaging Transfer |
摘要 |
Techniques for forming an odd number of fins by SIT are provided. In one aspect, a method of forming an odd number of fins by SIT includes the steps of: forming a pad layer on a substrate; forming at least one mandrel on the pad layer; forming a first pair of spacers on opposite sides of the mandrel; forming a second pair of spacers on a side of the first pair of spacers opposite the mandrel; removing the first pair of spacers selective to the mandrel and the second pair of spacers; and patterning the odd number of fins in the substrate using a combination of the mandrel and the second pair of spacers as fin masks. A method of forming a finFET device and a fin device structure are also provided. |
申请公布号 |
US2017092745(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201514867789 |
申请日期 |
2015.09.28 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Miao Xin |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming an odd number of fins by sidewall imaging transfer (SIT), the method comprising the steps of:
forming a pad layer on a substrate; forming at least one mandrel on the pad layer; forming a first pair of spacers on opposite sides of the mandrel; forming a second pair of spacers on a side of the first pair of spacers opposite the mandrel; removing the first pair of spacers selective to the mandrel and the second pair of spacers; and patterning the odd number of fins in the substrate using a combination of the mandrel and the second pair of spacers as fin masks. |
地址 |
Armonk NY US |