THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE

摘要

Provided is a 3DIC structure including first and second IC chips and connectors. The first IC chip includes a first metallization structure, a first optical active component, and a first photonic interconnection layer. The second IC chip includes a second metallization structure, a second optical active component, and a second photonic interconnection layer. The first and second IC chips are bonded via the first and second photonic interconnection layers. The first optical active component is between the first photonic interconnection layer and the first metallization structure. The first optical active component and the first metallization structure are bonded to each other. The second optical active component is between the second photonic interconnection layer and the second metallization structure. The second optical active component and the second metallization structure are bonded to each other.

主权项

1. A 3D integrated circuit structure, comprising:
a first IC chip comprising a first metallization structure, a first optical active component, and a first photonic interconnection layer; and a second IC chip comprising a second metallization structure, a second optical active component, and a second photonic interconnection layer, wherein the first IC chip and the second IC chip are bonded via the first photonic interconnection layer and the second photonic interconnection layer, wherein the first optical active component is located between the first photonic interconnection layer and the first metallization structure, and wherein the second optical active component is located between the second photonic interconnection layer and the second metallization structure.