METHODS FOR FORMING A SILICON CONTAINING DIELECTRIC FILM USING A GAS MIXTURE WITH AR GAS DILUSION

摘要

Embodiments of the disclosure generally provide methods of forming a silicon containing layer utilizing a deposition gas mixture with Ar gas dilution in a plasma enhanced chemical vapor deposition (PECVD) process for display devices. The silicon containing layer may be used as an insulating layer, a passivation layer, a gate dielectric layer, an etch stop layer, an interlayer insulator or other suitable layers in thin film transistor (TFT) devices, or other suitable display applications. In one embodiment, a method for forming a silicon containing layer on a substrate includes supplying a gas mixture having a reacting gas, a TEOS gas and an argon gas into the processing chamber, wherein a ratio between the reacting gas and the argon gas is between about 10:1 and 1:60, and forming a silicon containing layer on the substrate

主权项

1. A method for forming a silicon containing layer on a substrate comprising:
supplying a gas mixture having a reacting gas, a tetraethyl orthosilicate (TEOS) gas and an argon gas into a processing chamber, wherein a volumetric ratio of the reacting gas to the argon gas is between about 10:1 and 1:60, wherein the reacting gas is an oxygen containing gas; and forming a silicon containing layer on the substrate in the presence of the gas mixture, wherein the silicon containing layer is utilized as a gate insulating layer, an etching stop layer, or a passivation layer in a thin film transistor device structure.