| 摘要 |
The invention relates to a method for generating single-crystalline aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents of between 0.01 and 50 at.% with respect to 100 at.% of the total amount of substance of the doped aluminium nitride, characterized in that, in a crucible, in the presence of a gas selected from nitrogen or noble gas or a mixture of nitrogen and noble gas, a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material of aluminium nitride are sublimated and recondensed on a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium. The invention likewise relates to a corresponding device, and the corresponding single-crystalline products and the use thereof, creating the basis for novel components based on layers or stacks of layers of aluminium gallium nitride, indium aluminium nitride or indium aluminium gallium nitride. |
