SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

主权项

1. A semiconductor component comprising:
a semiconductor substrate; and a semiconductor device provided on the semiconductor substrate, wherein, the semiconductor device is a field-effect transistor with a gate insulating film on the semiconductor substrate, a gate electrode on the gate insulating film, and a pair of source-drain regions sandwiching the gate electrode, the semiconductor substrate includes a patterned surface in a portion where the field-effect transistor is provided, the patterned surface includes a raised portion on which the gate insulating layer and the gate electrode are located, the patterned surface of the semiconductor substrate includes recesses opposite sides of the raised portion, the source-drain regions being located in the recesses, and the source-drains regions have top surface regions that are below the raised surface of the semiconductor substrate.