SEMICONDUCTOR DEVICE AND POWER CONVERTER

摘要

There is provided a semiconductor device comprising a substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a trench and an insulating film arranged to cover a surface of the trench. The first semiconductor layer has a carrier concentration that provides a peak in a thickness direction perpendicular to a plane direction. A high carrier concentration area having a peak of the carrier concentration in the first semiconductor layer is extended in the plane direction at a location away from the trench to be located on the substrate side of the trench. This configuration reduces the on resistance while suppressing reduction of the breakdown voltage in the semiconductor device.

主权项

1. A semiconductor device, comprising:
a substrate that is extended in a plane direction; a first semiconductor layer that is located above the substrate and has one characteristic out of an n-type characteristic and a p-type characteristic; a second semiconductor layer that is located above the first semiconductor layer and has the other characteristic out of the n-type characteristic and the p-type characteristic which is different from the one characteristic; a third semiconductor layer that is located above the second semiconductor layer and has the one characteristic; a trench that is formed from the third semiconductor layer to penetrate through the second semiconductor layer and to be recessed into the first semiconductor layer; and an insulating film that is arranged to cover a surface of the trench, wherein the first semiconductor layer has a carrier concentration that provides a peak in a thickness direction perpendicular to the plane direction, and a high carrier concentration area having a peak of the carrier concentration in the first semiconductor layer is extended in the plane direction at a location away from the trench to be located on the substrate side of the trench.