| 发明名称 |
High Electron Mobility Transistor and Method of Forming the Same |
| 摘要 |
A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is smaller than the first band gap. The HEMT further includes a third III-V compound layer having a third band gap over the second III-V compound layer, wherein the third band gap is greater than the first band gap. A gate electrode is formed over the third III-V compound layer. A source region and a drain region are over the third III-V compound layer and on opposite sides of the gate electrode. |
| 申请公布号 |
US2017092738(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615377622 |
申请日期 |
2016.12.13 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chiang Chen-Hao;Liu Po-Chun;Chiu Han-Chin;Chen Chi-Ming;Yu Chung-Yi |
| 分类号 |
H01L29/66;H01L21/283;H01L21/02;H01L21/324;H01L21/265;H01L21/311 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a High Electron Mobility Transistor (HEMT), the method comprising:
epitaxially growing a first III-V compound layer having a first band gap; epitaxially growing a second III-V compound layer having a second band gap smaller than the first band gap over the first III-V compound layer; epitaxially growing a third III-V compound layer having a third band gap greater than the first band gap over the second III-V compound layer; forming a gate electrode over the third III-V compound layer; and forming a source region and a drain region over the third III-V compound layer and on opposite sides of the gate electrode. |
| 地址 |
Hsin-Chu TW |
