发明名称 |
METHOD OF MANUFACTURING FOR MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WORK FUNCTION GATE ELECTRODE |
摘要 |
A semiconductor devices including non-volatile memories and methods of fabricating the same to improve performance thereof are provided. Generally, the device includes a memory transistor comprising a polysilicon channel region electrically connecting a source region and a drain region formed in a substrate, an oxide-nitride-nitride-oxide (ONNO) stack disposed above the channel region, and a high work function gate electrode formed over a surface of the ONNO stack. In one embodiment the ONNO stack includes a multi-layer charge-trapping region including an oxygen-rich first nitride layer and an oxygen-lean second nitride layer disposed above the first nitride layer. Other embodiments are also disclosed. |
申请公布号 |
US2017092729(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615335180 |
申请日期 |
2016.10.26 |
申请人 |
Cypress Semiconductor Corporation |
发明人 |
Polishchuk Igor;Levy Sagy Charel;Ramkumar Krishnaswamy |
分类号 |
H01L29/423;H01L29/51;H01L29/792;H01L29/66;H01L29/06;H01L29/49 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
San Jose CA US |