发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench. |
申请公布号 |
US2017092718(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615374263 |
申请日期 |
2016.12.09 |
申请人 |
Renesas Electronics Corporation |
发明人 |
MURATA Tatsunori;MARUYAMA Takahiro |
分类号 |
H01L29/06;H01L21/02;H01L21/762;H01L21/764 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |