IMAGING DEVICE

摘要

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

主权项

1. An imaging device comprising:
a photoelectric conversion element; first to fourth transistors; a capacitor; and first to seventh wirings, wherein the photoelectric conversion element comprises an n-type semiconductor and a p-type semiconductor, wherein the first wiring is electrically connected to one of the n-type semiconductor and the p-type semiconductor, wherein the other of the n-type semiconductor and the p-type semiconductor is electrically connected to one of a source and a drain of the first transistor, wherein a gate of the first transistor is electrically connected to the second wiring, wherein the other of the source and the drain of the first transistor is electrically connected to a first node, wherein one of a source and a drain of the second transistor is electrically connected to the third wiring, wherein the other of the source and the drain of the second transistor is electrically connected to the first node, wherein a gate of the second transistor is electrically connected to the fourth wiring, wherein one electrode of the capacitor is electrically connected to the first node, wherein the other electrode of the capacitor is electrically connected to the first wiring, wherein a gate of the third transistor is electrically connected to the first node, wherein one of a source and a drain of the third transistor is electrically connected to the fifth wiring, wherein the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor, wherein the other of the source and the drain of the fourth transistor is electrically connected to the sixth wiring, and wherein a gate of the fourth transistor is electrically connected to the seventh wiring.