发明名称 Chip Packages and Methods of Manufacture Thereof
摘要 Chip packages and method of manufacturing the same are disclosed. In an embodiment, a chip package may include: a redistribution layer (RDL); a first chip including a plurality of first contact pads, the plurality of first contact pads facing the RDL; a second chip disposed between the first chip and the redistribution layer (RDL) wherein a portion of the first chip is disposed outside a lateral extent of the second chip; and a conductive via laterally separated from the second chip, the conductive via extending between the RDL and a first contact pad of the plurality of first contact pads, the first contact pad located in the portion of the first chip disposed outside the lateral extent of the second chip.
申请公布号 US2017092617(A1) 申请公布日期 2017.03.30
申请号 US201514871447 申请日期 2015.09.30
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Wu Chih-Wei;Lin Jing-Cheng;Lu Szu-Wei;Shih Ying-Ching
分类号 H01L25/065;H01L25/00 主分类号 H01L25/065
代理机构 代理人
主权项 1. A chip package, comprising: a first redistribution layer (RDL); a first chip comprising a plurality of first contact pads on a first surface of the first chip, the plurality of first contact pads facing the first RDL; a second RDL over and contacting the first surface of the first chip, the second RDL being coupled to the plurality of first contact pads and having a same width with the first chip; a second chip comprising a plurality of second contact pads on a first surface of the second chip, the plurality of second contact pads facing the first RDL, the second chip being laterally adjacent to the first chip; a third RDL over and contacting the first surface of the second chip, the third RDL being coupled to the plurality of second contact pads and having a same width with the second chip, wherein the second RDL is laterally separated from the third RDL with a molding compound disposed therebetween; a third chip disposed between the first chip and the first RDL, the third chip interposed between the second chip and the first RDL, wherein a portion of the first chip is disposed outside a lateral extent of the third chip, wherein a portion of the second chip is disposed outside the lateral extent of the third chip, and wherein the third chip comprises a plurality of third contact pads facing the first RDL; and a conductive via laterally separated from the third chip, the conductive via extending between the first RDL and a first contact pad of the plurality of first contact pads, the first contact pad located in the portion of the first chip disposed outside the lateral extent of the third chip, wherein an end of the conductive via adjacent to the first RDL is coplanar with pillars on the plurality of third contact pads of the third chip.
地址 Hsin-Chu TW