SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) providing a semiconductor wafer having:
a substrate comprised of an monocrystalline silicon,a multiple layer formed on a main surface of the substrate, the multiple layer having a wiring comprised of a first metal, a first insulating film comprised of SiO (silicon oxide), and a second insulating film having a dielectric constant lower than a dielectric constant of the first insulating film,a first pad comprised of a second metal, and formed on a front surface of the multiple layer, the first pad being arranged in a first region, which is to be obtained as a first semiconductor chip, in the front surface of the multiple layer in plan view,a second pad comprised of the second metal, and formed on the front surface of the multiple layer, the second pad being arranged in a second region, which is to be obtained as a second semiconductor chip, in the front surface of the multiple layer in plan view, anda third pad comprised of the second metal, and formed on the front surface of the multiple layer, the third pad being arranged in a third region, which is to be removed by using a dicing saw, in the front surface of the multiple layer in plan view, the third region being located between the first region and the second region in plan view; (b) after the step (a), irradiating both sides of the third pad of the semiconductor wafer with a laser beam so as not to contact with the first, second and third pads, thereby forming a first amorphous silicon and a second amorphous silicon in the monocrystalline silicon, the laser beam being irradiated along a side of each of the first and second regions in plan view; and (c) after the step (b), removing all of the third pad and a part of the multiple layer, which is located between the first amorphous silicon and the second amorphous silicon, by using the dicing saw.