SELF-ALIGNED MULTIPLE SPACER PATTERNING SCHEMES FOR ADVANCED NANOMETER TECHNOLOGY

摘要

The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.

主权项

1. A method for forming nanometer features in a material layer disposed on a substrate comprising:
performing multiple deposition processes on a substrate to form multiple mask layers on a material layer disposed on a substrate, where the multiple mask layer includes N mask layers, wherein N is a positive integer greater than or equals to 2; and selectively etching a portion of the mask layers formed in the multiple mask layer from the substrate to form a first group of openings in between each of the mask layers, wherein the mask layers being removed from the substrate are a (N−1) layer and a (N−(1+2X)) layer, wherein X is an integer less than N.