| 发明名称 |
Electrochemical Plating |
| 摘要 |
Methods for use in electrochemical plating processes are described herein. An exemplary method includes determining a wafer electrical property associated with a wafer, wherein the wafer electrical property affects the wafer during an electrochemical plating (ECP) process; adjusting a process parameter to be applied to the wafer during the ECP process based on the determined wafer electrical property, wherein the process parameter specifies at least one of a current or a voltage; and applying the adjusted process parameter to the wafer undergoing the ECP process. In some implementations, the process parameter is adjusted, such that a peak entry current of the ECP process substantially matches a plating current of the ECP process induced following the peak entry current. |
| 申请公布号 |
US2017088970(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615376060 |
申请日期 |
2016.12.12 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd., |
发明人 |
Lien Chen-Kuang;Chiu Lun-Chieh;Chang Yu-Min |
| 分类号 |
C25D21/12;H01L23/522;H01L23/532;C25D7/12;H01L21/768 |
主分类号 |
C25D21/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
determining a wafer electrical property associated with a wafer, wherein the wafer electrical property affects the wafer during an electrochemical plating (ECP) process; adjusting a process parameter to be applied to the wafer during the ECP process based on the determined wafer electrical property, wherein the process parameter specifies at least one of a current or a voltage; and applying the adjusted process parameter to the wafer undergoing the ECP process. |
| 地址 |
Hsin-Chu TW |
