发明名称 Wafer Susceptor with Improved Thermal Characteristics
摘要 An IC fabrication system for facilitating improved thermal uniformity includes a chamber within which an IC process is performed on a substrate, a heating mechanism configured to heat the substrate, and a substrate-retaining device configured to retain the substrate in the chamber. The substrate-retaining device includes a contact surface configured to contact an edge of the retained substrate without the substrate-retaining device contacting a circumferential surface of the retained substrate. The substrate-retaining device includes a plurality of contact regions and a plurality of noncontact regions disposed at a perimeter, where the plurality of noncontact regions is interspersed with the plurality of contact regions. Each of the plurality of noncontact regions includes the contact surface. Alternatively, the substrate-retaining device includes a base portion having a circular surface and a cylindrical surface extending from the circular surface, where a ring portion having the contact surface is disposed within the base portion.
申请公布号 US2017088976(A1) 申请公布日期 2017.03.30
申请号 US201615375561 申请日期 2016.12.12
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Yi-Hung;Li Jr-Hung;Lu Chang-Shen;Lee Tze-Liang;Li Chii-Horng
分类号 C30B25/12;H01L21/67;H01L21/687;C30B25/10;C23C16/458 主分类号 C30B25/12
代理机构 代理人
主权项 1. An integrated circuit (IC) fabrication system comprising: a chamber within which an IC process is performed on a substrate; a heating mechanism configured to heat the substrate during the IC process; and a substrate-retaining device configured to retain the substrate in the chamber during the IC process, wherein the substrate-retaining device includes: a surface having a perimeter defined thereupon,a plurality of contact regions disposed at the perimeter, anda plurality of noncontact regions disposed at the perimeter and interspersed with the plurality of contact regions, wherein each of the plurality of contact regions includes a contact surface configured to contact an edge of the retained substrate without the substrate-retaining device contacting a circumferential surface of the retained substrate.
地址 Hsin-Chu TW