PROCESS KIT SHIELD AND PHYSICAL VAPOR DEPOSITION CHAMBER HAVING SAME

摘要

Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.

主权项

1. A method for processing a substrate using a process kit shield in a physical vapor deposition (PVD) chamber, comprising:
depositing, in a first deposition process, a first material on the substrate and the process kit shield in the PVD chamber, the process kit shield comprising:
an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, andan etch stop coating formed on opening-facing surfaces of the annular body, wherein the etch stop coating is fabricated from a second material that is different from the first material, the second material having an etch selectivity with respect to the first material sufficient to facilitate substantially complete removal of the first material deposited on the process kit shield through the first deposition process without etching through the second material; and performing an etch cleaning process to selectively remove the first material deposited on the etch stop coating of the process kit shield through the first deposition process without completely etching through the second material.