发明名称 |
BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES OF DEVICES |
摘要 |
An apparatus including a circuit structure including a device stratum including a plurality of devices including a first side and an opposite second side; and a metal interconnect coupled to at least one of the plurality of devices from the second side of the device stratum. A method including forming a transistor device including a channel between a source region and a drain region and a gate electrode on the channel defining a first side of the device; and forming an interconnect to one of the source region and the drain region from a second side of the device. |
申请公布号 |
WO2017052638(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
WO2015US52440 |
申请日期 |
2015.09.25 |
申请人 |
INTEL CORPORATION |
发明人 |
MORROW, Patrick;MEHANDRU, Rishabh;LILAK, Aaron D.;JUN, Kimin |
分类号 |
H01L29/78;H01L21/336;H01L27/12 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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