| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device (300) comprising: a doped semiconductor substrate (302); an epitaxial layer (304), disposed on top of the substrate, the epitaxial layer having a lower concentration of dopant than the substrate; a switching region disposed on top of the epitaxial layer; and a contact diffusion (350) disposed on top of the epitaxial layer, the contact diffusion having a higher concentration of dopant than the epitaxial layer; wherein the epitaxial layer forms a barrier between the contact diffusion and the substrate. |
| 申请公布号 |
US2017092761(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615253563 |
申请日期 |
2016.08.31 |
| 申请人 |
NXP B.V. |
发明人 |
Habenicht Soenke;Holland Steffen |
| 分类号 |
H01L29/78;H01L29/417;H01L29/739;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device comprising:
a doped semiconductor substrate; an epitaxial layer, disposed on top of the substrate, the epitaxial layer having a lower concentration of dopant than the substrate; a switching region disposed on top of the epitaxial layer; and a contact diffusion disposed on top of the epitaxial layer, the contact diffusion having a higher concentration of dopant than the epitaxial layer; wherein the epitaxial layer forms a barrier between the contact diffusion and the substrate. |
| 地址 |
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