FINFET Structure and Method for Fabricating the Same

摘要

A method comprises recessing a substrate to form a fin enclosed by an isolation region, wherein the substrate is formed of a first semiconductor material, recessing the fin to form a trench over a lower portion of the fin, growing a second semiconductor material in the trench to form a middle portion of the fin through a first epitaxial process, forming a first carbon doped layer over the lower portion through a second epitaxial process, growing the first semiconductor material over the first carbon doped layer to form an upper portion of the fin through a third epitaxial process, forming a first source/drain region through a fourth epitaxial process, wherein a second carbon doped layer is formed underlying the first source/drain region and applying a thermal oxidation process to the middle portion of the fin to form an oxide outer layer.

主权项

1. A method comprising:
recessing a substrate to form a fin enclosed by an isolation region, wherein the substrate is formed of a first semiconductor material; recessing the fin to form a trench over a lower portion of the fin; growing a second semiconductor material in the trench to form a middle portion of the fin through a first epitaxial process; forming a first carbon doped layer over the lower portion through a second epitaxial process; growing the first semiconductor material over the first carbon doped layer to form an upper portion of the fin through a third epitaxial process; forming a first source/drain region through a fourth epitaxial process, wherein a second carbon doped layer is formed underlying the first source/drain region; and applying a thermal oxidation process to the middle portion of the fin to form an oxide outer layer.