发明名称 |
METHOD FOR PURIFYING SILANE COMPOUND OR CHLOROSILANE COMPOUND, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND METHOD FOR REGENERATING WEAKLY BASIC ION-EXCHANGE RESIN |
摘要 |
The present invention provides a technique which allows stable use of an ion-exchange resin for removing boron impurities over a long period of time in the purification step of a silane compound or a chlorosilane compound. In the present invention, a weakly basic ion-exchange resin used for the purification of a silane compound and a chlorosilane compound is cleaned with a gas containing hydrogen chloride. When this cleaning treatment is used for the initial activation of the weakly basic ion-exchange resin, a higher impurity-adsorbing capacity can be obtained. Further, use of the cleaning treatment for the regeneration of the weakly basic ion-exchange resin allows stable use of the ion-exchange resin for a long time. This allows reduction in the amount of the resin used in a long-term operation and reduction in the cost of used resin disposal. |
申请公布号 |
EP2985262(A4) |
申请公布日期 |
2017.03.29 |
申请号 |
EP20140782400 |
申请日期 |
2014.01.15 |
申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
ISHIDA, Masahiko;SAITO, Hiroshi;YOSHIDA, Atsushi |
分类号 |
C01B33/107;B01J20/26;B01J20/34;B01J41/04;B01J41/07;B01J41/08;B01J41/09;B01J49/00;B01J49/57;C01B33/04 |
主分类号 |
C01B33/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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