发明名称 |
SIC SINGLE CRYSTAL, SIC WAFER, SIC SUBSTRATE, AND SIC DEVICE |
摘要 |
A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a <1-100> direction with respect to a facet portion, while the region (B) is located in a <11-20> direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate. |
申请公布号 |
EP2959512(B1) |
申请公布日期 |
2017.03.29 |
申请号 |
EP20140705584 |
申请日期 |
2014.02.07 |
申请人 |
DENSO CORPORATION;SHOWA DENKO K.K. |
发明人 |
GUNJISHIMA, Itaru;KANZAWA, Yusuke;URAKAMI, Yasushi;KOBAYASHI, Masakazu |
分类号 |
H01L29/32;C30B23/00;C30B29/36;H01L29/04;H01L29/16 |
主分类号 |
H01L29/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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