| 发明名称 |
GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD |
| 摘要 |
In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≤x1≤1, 0<x1+y1≤1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≤x2≤1, 0≤x2+y2≤1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided. |
| 申请公布号 |
EP3146093(A1) |
申请公布日期 |
2017.03.29 |
| 申请号 |
EP20150727806 |
申请日期 |
2015.05.24 |
| 申请人 |
Sixpoint Materials, Inc.;Seoul Semiconductor Co., Ltd. |
发明人 |
HASHIMOTO, Tadao;LETTS, Edward |
| 分类号 |
C30B7/10;C30B29/40 |
主分类号 |
C30B7/10 |
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