发明名称 |
METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE |
摘要 |
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate. |
申请公布号 |
EP2132357(B1) |
申请公布日期 |
2017.03.29 |
申请号 |
EP20080710125 |
申请日期 |
2008.02.21 |
申请人 |
L'air Liquide-societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
发明人 |
XIA, Bin;MISRA, Ashutosh |
分类号 |
C23C16/06;C23C16/40;C23C16/448 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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